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Vacuum evaporation system for depositing thick polycrystalline silicon

 

作者: Yusuke Ota,   Raymond A. Clapper,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 3  

页码: 320-326

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582817

 

出版商: American Vacuum Society

 

关键词: POLYCRYSTALS;SILICON;VACUUM EVAPORATION;ELECTRON BEAM EVAPORATION;DESIGN;INTEGRATED CIRCUITS;FABRICATION;SEMICONDUCTOR DEVICES;LAYERS;SILICA;VAPOR DEPOSITED COATINGS;VACUUM SYSTEMS;FILMS

 

数据来源: AIP

 

摘要:

Thick polysilicon (>1 mm) deposition on heated SiO2‐coated silicon substrates at high deposition rate (≥4 μm/min) at temperatures to 1100 °C was achieved by vacuum evaporation of silicon using two high power e guns. The deposition system was able to accommodate ten 75 mm diam substrates or eight 100 mm diam substrates. The system was designed as an alternative to the CVD process for depositing polysilicon material for dielectrically isolated integrated circuit substrates. This paper describes the system design and its capabilities.

 

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