Analysis of semiconductor laser optical amplifiers
作者:
M.J.Adams,
J.V.Collins,
I.D.Henning,
期刊:
IEE Proceedings J (Optoelectronics)
(IET Available online 1985)
卷期:
Volume 132,
issue 1
页码: 58-63
年代: 1985
DOI:10.1049/ip-j.1985.0012
出版商: IEE
数据来源: IET
摘要:
A new analytical model for semiconductor laser amplifiers is presented. It has the virtue of avoiding excessive numerical computation and yet retaining sufficient accuracy for most cases of interest. The essentially new feature is the use of an appropriate mean photon density obtained by averaging the axial field distribution along the cavity length. Calculated results are presented for gain, saturation power and tuning characteristics, and their sensitivity to current density, facet reflectivities, and the spontaneous emission coefficient is explored.
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