The dielectric stack of multilevel metal interconnections of integrated circuits contains various forms of dielectrics separating metal conductors. Silicon dioxide deposited by plasma enhanced chemical vapor deposition (PECVD) is one such dielectric. The formation of voids in some of the metal layers stimulated a study of the thermal desorption of H2O from oxide films. The films were deposited by plasma enhanced chemical vapor deposition using a tetraethylorthosilicate precursor. The total amount of H2O desorbed was measured as a function of two deposition variables, deposition substrate temperature, and deposition plasma power. The total amount of H2O desorbed could be reduced by either increasing the deposition substrate temperature or increasing the deposition plasma power.