首页   按字顺浏览 期刊浏览 卷期浏览 Formation and damage of sidewalls after Cl2/CH4based reactive ion beam of InP
Formation and damage of sidewalls after Cl2/CH4based reactive ion beam of InP

 

作者: R. van Roijen,   C. W. T. Bulle‐Lieuwma,   E. A. Montie,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 5  

页码: 2188-2191

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586187

 

出版商: American Vacuum Society

 

关键词: PHOTOELECTRON SPECTROSCOPY;ETCHING;PHOTOLUMINESCENCE;FABRICATION;INDIUM PHOSPHIDES;GALLIUM ARSENIDES;QUATERNARY COMPOUNDS;DAMAGE;AUGER ELECTRON SPECTROSCOPY;InP;InGaAsP

 

数据来源: AIP

 

摘要:

The cause of anisotropic etching of a reactive ion etching (RIE) process for InP/InGaAsP involving a mixture of Cl2, Ar, CH4, and H2is investigated, applying Auger photoelectron spectroscopy and transmission electron spectroscopy. The extend of sidewall damage is given. An InP/InGaAsP heterostructure quantum wirelike structure is fabricated and the effect on the photoluminescence intensity and wavelength is reported. Successful device fabrication using RIE is demonstrated.

 

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