New deep level luminescence bands observed from both a SiGe alloy layer and Si/Ge superlattice structures
作者:
V. Higgs,
E. C. Lightowlers,
G. F. A. van de Walle,
D. J. Gravesteijn,
E. A. Montie,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 20
页码: 2579-2581
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105908
出版商: AIP
数据来源: AIP
摘要:
Photoluminescence measurements have been made on Si/Ge short period superlattice structures grown on a SiGe alloy buffer layer and on a similar SiGe alloy layer without a superlattice. Using an InSb detector with a low energy cutoff at ∼450 meV, the major luminescence features observed were two broad bands with maximum intensities at ∼530 and ∼720 meV. The luminescence intensity was found to vary with the superlattice composition but was substantially stronger for the SiGe alloy layer without a superlattice. We ascribe these luminescence features to defects in the SiGe alloy layers. This is supported by the observation that the introduction of deliberate copper contamination at 600 °C dramatically increases the photoluminescence signal.
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