Effects of buffer layers in epitaxial growth of SrTiO3thin film on Si(100)
作者:
Osamu Nakagawara,
Masato Kobayashi,
Yukio Yoshino,
Yuˆzoˆ Katayama,
Hitoshi Tabata,
Tomoji Kawai,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 12
页码: 7226-7230
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.360433
出版商: AIP
数据来源: AIP
摘要:
SrTiO3thin film has been formed on Si(100) substrates with various single buffer layers such as SrO, CeO2, CaF2, CoSi2and a multibuffer layer, YSZ/Y2O3/YBa2Cu3O7by ArF excimer laser ablation. The relation of lattice orientation of buffer layers with SrTiO3layer has been elucidated. The orientation of SrTiO3film is influenced not only by lattice matching but by crystal structure and chemical bonding of the buffer layers. As well, the multibuffer layer more effectively forms preferentialc‐axis oriented SrTiO3film on Si(100), while CoSi2buffer is more effective for improving the dielectric constant of SrTiO3than other buffer layers. ©1995 American Institute of Physics.
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