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Automated control of III–V semiconductor composition and structure by spectroellipsometry

 

作者: W. E. Quinn,   D. E. Aspnes,   M. J. S. P. Brasil,   M. A. A. Pudensi,   S. A. Schwarz,   M. C. Tamargo,   S. Gregory,   R. E. Nahory,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 2  

页码: 759-761

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586442

 

出版商: American Vacuum Society

 

关键词: ELLIPSOMETRY;MOLECULAR BEAM EPITAXY;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;QUANTUM WELL STRUCTURES;DIELECTRIC FUNCTION;CONTROL SYSTEMS;QUASI−BINARY COMPOUNDS

 

数据来源: AIP

 

摘要:

Probes that can monitor and control crystal growth in real time could significant improve sample yield and material reliability. We are developing one such probe, spectroellipsometry, for controlling growth by organometallic molecular beam epitaxy. Our system is presently capable of holding the composition of thick AlxGa(1−x)As layers constant to a precision of ±0.1%, and has been used to control growth of purposely compositionally graded structures, such as parabolic quantum wells 200 Å wide.

 

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