A contact metallization scheme of Ge/Pd(Zn), based on the solid‐phase regrowth principle, has been developed for the formation of Ohmic contact onp‐InP. Typical contact resistivities of low 10−4to low 10−5&OHgr; cm2can be obtained after annealing at temperatures higher than 400 °C. Cross‐sectional transmission electron microscopy study confirmed the solid‐phase regrowth process in the InP substrate. Precipitates of trapped materials during solid phase regrowth have also been observed. A solid phase regrowth model is proposed to rationalize the electrical and metallurgical properties. This solid phase regrowth process is expected to form low resistance Ohmic contact on other In‐based compound semiconductors. ©1995 American Institute of Physics.