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Stored energy in ion implanted Bi4Ge3O12

 

作者: M.Jimenez De Castro,   S.M. Mahdavi,   P.D. Townsend,   J.L. Alvarez Rivas,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1991）
卷期: Volume 118, issue 2  

页码: 137-142

 

ISSN:1042-0150

 

年代: 1991

 

DOI:10.1080/10420159108220629

 

出版商: Taylor & Francis Group

 

关键词: ion implantation in Bi4Ge3O12;stored energy release;thermal annealing;defect complexes;X-ray irradiation

 

数据来源: Taylor

 

摘要:

Data are reported for stored energy release from Bi4Ge3O12after He+ion implantation and/or gamma ray irradiation. Approximately 0.2% of the ion beam energy is stored and subsequently thermally released during defect annealing. The data imply that the complex defects formed by ion implantation lead to very significant quantities of energy storage at each defect site.

 

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