Damage evolution and surface defect segregation in low-energy ion-implanted silicon
作者:
P. J. Bedrossian,
M.-J. Caturla,
T. Diaz de la Rubia,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 2
页码: 176-178
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118349
出版商: AIP
数据来源: AIP
摘要:
We have combined computer simulations and atomic-resolution tunneling microscopy to investigate the kinetics of defect migration during annealing of ion implanted Si(111)-7×7. Using atomically-clean and flat surfaces as sinks for bulk point defects introduced by the irradiation, we observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials, and we demonstrate that the distinct kinetics of each type of bulk point defect govern their surface segregation kinetics. A combination of simulation tools provides a detailed description of the processes that underlie the observed temperature-dependence of defect migration. ©1997 American Institute of Physics.
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