Depth-resolved micro-Raman study of porous silicon at different oxidation states
作者:
J. D. Moreno,
F. Agullo´-Rueda,
E. Montoya,
M. L. Marcos,
J. Gonza´lez-Velasco,
R. Guerrero-Lemus,
J. M. Martı´nez-Duart,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 15
页码: 2166-2168
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119370
出版商: AIP
数据来源: AIP
摘要:
Photoluminescence (PL) and Raman spectra were measured along a cross section of porous silicon films at different oxidation times after application of anodic current transients. The average crystallite size was determined from the Raman spectra with the standard phonon confinement model. Before oxidation, the PL emission energy and crystallite size were found to be independent of the layer depth. Also, the integrated PL emission was larger for the middle layers. The effect of oxidation was a blueshift of the PL band and a decrease in the integrated emission for the outer layers. The crystallite size increases for all layers, particularly the outer ones. ©1997 American Institute of Physics.
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