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Inverted cavity GaAs/InGaAs asymmetric Fabry–Perot reflection modulator

 

作者: Kezhong Hu,   Li Chen,   Anupam Madhukar,   Ping Chen,   Chris Kyriakakis,   Zaheed Karim,   Armand R. Tanguay,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 59, issue 14  

页码: 1664-1666

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.106261

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the realization of an inverted cavity (through‐substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained‐layer GaAs/InGaAs multiple quantum wells. At room temperature, a contrast ratio of 12:1 is realized along with a dynamic range of 20% at an operating wavelength of 9565 A˚.

 

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