Surface reaction of trisdimethylaminoarsenic onGaAs(001)-c(4×4)and(4×6)
作者:
Jie Cui,
Masashi Ozeki,
Masafumi Ohashi,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 18
页码: 2659-2661
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120170
出版商: AIP
数据来源: AIP
摘要:
The surface decomposition of trisdimethylaminoarsenic (TDMAAs) on GaAs (001) has been studied employing supersonic molecular beam scattering. It was found that TDMAAs molecules adsorbed dissociatively on GaAs (001) surfaces at room temperature through a Langmuir adsorption mechanism. The initial Ga-rich(4×6)surface changed into an As-richc(4×4)surface after the injection of TDMAAs. The species such as dimethylamine and methylmethyleneimine desorbed at the surface temperatures of 150 and 230 °C, respectively, as measured by temperature-programmed desorption (TPD) spectra. The polar-angle dependence of desorption showed that the desorption of species has two maximal intensities, at the directions along surface normal and 60°, respectively. ©1997 American Institute of Physics.
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