Formation of carbon-induced germanium dots
作者:
O. G. Schmidt,
C. Lange,
K. Eberl,
O. Kienzle,
F. Ernst,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 16
页码: 2340-2342
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120072
出版商: AIP
数据来源: AIP
摘要:
A very small amount of pre-deposited C on a Si substrate causes island formation after epitaxial growth of less than 2 monolayers Ge. These C-induced Ge dots can be as small as 10 nm in lateral size and 1 nm in height. Their areal density is1011 cm−2. Intense photoluminescence signal from these small Ge quantum dots is observed reaching a maximum for 2.1±0.3 monolayers of Ge. In the initial stages of island formation, the optical transition of the wetting layer is blue-shifted by strain compensation effects. We propose spatially indirect mechanisms of radiative recombination between electrons confined in the underlying wetting layer and holes confined in the Ge islands. ©1997 American Institute of Physics.
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