首页   按字顺浏览 期刊浏览 卷期浏览 Zener tunneling condition and the hysteresis of trapped charge in an AlGaSb barrier in ...
Zener tunneling condition and the hysteresis of trapped charge in an AlGaSb barrier in AlGaSb/InAs/AlGaSb double‐barrier structures

 

作者: F. A. Buot,   A. K. Rajagopal,  

 

期刊: Journal of Applied Physics  (AIP Available online 1995)
卷期: Volume 77, issue 11  

页码: 6046-6048

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.359192

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The essential role played by the physics of Zener tunneling of electrons from the barrier to the drain in finding the solutions to the field, energy‐balance, and quantum transport equations in AlGaSb/InAs/AlGaSb double‐barrier structures is pointed out. It is shown that the self‐consistent physical consideration on these equations is crucial in obtaining interesting and realistic novel hysteresis phenomena of the trapped hole charge in an AlGaSb barrier. There exist solutions to the above equations which do not incorporate the physics of Zener tunneling, which are therefore physically untenable.

 

点击下载:  PDF (385KB)



返 回