Thin film position sensitive detector based on amorphous siliconp–i–ndiode
作者:
Elvira Fortunato,
Guilherme Lavareda,
Manuela Vieira,
Rodrigo Martins,
期刊:
Review of Scientific Instruments
(AIP Available online 1994)
卷期:
Volume 65,
issue 12
页码: 3784-3786
ISSN:0034-6748
年代: 1994
DOI:10.1063/1.1144507
出版商: AIP
数据来源: AIP
摘要:
The application of hydrogenated amorphous silicon (a–Si:H) to optoelectronic devices are now well established as a viable low cost technology and is presently receiving much interest. Taking advantage of the properties of a–Si:H based devices, single and dual axis large area (up to 80×80 mm2) thin film position sensitive detectors (TFPSD) based on a–Si:Hp–i–ndiodes have been developed, produced by plasma enhanced chemical vapor deposition. In this study, the main optoelectronic properties presented by the TFPSD as well as their behavior under operation conditions, concerning its linearity and signal to noise ratio, are reported. ©1994 American Institute of Physics.
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