The results of a Monte Carlo model for calculating the trajectories of electrons in the plasma sheath region in reactive‐ion‐etching plasmas are described. The calculations illustrate how the oscillating movement of the sheath imparts energy to electrons and alters the electron energy distribution (EED) within the bulk of a 13.56 MHz Ar discharge. The study is limited to low‐pressure discharges of less than about 10 mTorr, where the effects of electron‐molecule collisions can be ignored. Under these conditions it is found that the sheath imparts energy preferentially to low‐energy electrons. Calculated EEDs for electrons striking the electrodes in a radio‐frequency reactor are also presented. Most electrons strike the electrodes with energies of a few eV, but some electrons strike the substrate surface with impact energies as high as 20 eV. This may be an important consideration when modeling etch mechanisms. Secondary electron emission caused by ion bombardment of the electrodes is also modeled. Simulated EEDs for secondary electrons that are produced at the electrodes and accelerated by the action of the sheath potential into the plasma region are presented. These electrons have energies of up to several hundred eV and are therefore important in plasma‐sustaining mechanisms.