A numerical method for the determination of ultra‐shallow metal–oxide–semiconductor (MOS) doping profiles and the associated interface trap distribution from measured capacitance–voltage (C–V) characteristics is presented. The method is demonstrated via two cases: (a) theoretical analysis to assess the accuracy of the method; and (b) fabricated MOS test structures, with correlations with spreading resistance profiling (SRP) and secondary ion mass spectroscopy (SIMS). Excellent agreement is seen betweenC–Vand SRP. Our method appears so accurate that it should be considered for routineC–Vanalysis for shallow MOS doping profiles.