We report a conceptionally new approach to achieve electrostatically induced transport and confinement for spatially indirect excitons. Experimentally, exciton transport is demonstrated in an electric‐field‐tunable GaAs/AlAs coupled quantum well structure, which is configured as a three‐terminal device. In spatially resolved photoluminescence experiments, it is shown that indirect excitons experience a drift field, which is given by an electrostatically induced band‐gap gradient in the plane of the coupled quantum well structure. ©1995 American Institute of Physics.