Textured aluminum‐doped zinc oxide thin films from atmospheric pressure chemical‐vapor deposition
作者:
Jianhua Hu,
Roy G. Gordon,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 71,
issue 2
页码: 880-890
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.351309
出版商: AIP
数据来源: AIP
摘要:
Aluminum‐doped zinc oxide films have been deposited on soda lime glass substrates from diethyl zinc, triethyl aluminum, and ethanol by atmospheric pressure chemical‐vapor deposition in the temperature range 367–444 °C. Film roughness was controlled by the deposition temperature and the dopant concentration. The films have resistivities as low as 3.0 × 10−4&OHgr; cm, infrared reflectances close to 90%, visible transmissions of 85%, and visible absorptions of 5.0% for a sheet resistance of 4.0 &OHgr;/&laplac;. The aluminum concentration within doped films measured by electron microprobe is between 0.3 and 1.2 at. %. The electron concentration determined from Hall coefficient measurements is between 2.0 × 1020and 8.0 × 1020cm−3, which is in agreement with the estimates from the plasma wavelength. The Hall mobility, obtained from the measured Hall coefficient and dc resistivity, is between 10.0 and 35.0 cm2/V s. Over 90% of the aluminum atoms in the film are electrically active as electron donors. Scanning electron microscopy and x‐ray diffraction show that the films are crystalline with disklike structures of diameter 100–1000 nm and height 30–60 nm. The films have the desired electrical and optical properties for applications in solar cell technology and energy efficient windows.
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