Influence of growth conditions on electrical characteristics of AlN on SiC
作者:
C.-M. Zetterling,
M. O¨stling,
N. Nordell,
O. Scho¨n,
M. Deschler,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 26
页码: 3549-3551
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119229
出版商: AIP
数据来源: AIP
摘要:
Undoped aluminum nitride films were grown on 4H or 6H silicon carbide substrates, using metal–organic chemical-vapor deposition at 1150 °C. Different growth conditions were used, and two different V/III ratios were tested. Metal–insulator–semiconductor capacitors were made for high-frequency capacitance–voltage measurements at room temperature, from which the film thickness was determined. Accumulation, depletion, deep depletion, and inversion were seen for the best films, which also displayed peaks in x-ray diffraction rocking curves. Although large flatband voltage shifts occurred, indicating a fixed charge and interface trap problem, low conductance was observed. A flow of ammonia during ramp-up was found to improve the AlN films. ©1997 American Institute of Physics.
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