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Photoluminescence studies of hydrogenated GaAlAs grown by metalorganic vapor phase epitaxy

 

作者: R. Muralidharan,   T. Srinivasan,   Renu Tyagi,   M. V. G. Padmavati,   Mahesh Bal,   R. K. Purohit,   S. K. Agarwal,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 14  

页码: 2066-2068

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115080

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoluminescence studies on ‘‘as‐grown’’ as well as hydrogenated undoped AlGaAs epitaxial layers grown by metalorganic vapor phase epitaxy has been carried out to study the effective passivation of defect centers. We report the observation of defect bound excitons which are effectively passivated by hydrogenation and the preferential enhancement of excitonic features after hydrogenation. ©1995 American Institute of Physics.

 

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