The conditions of the growth of single crystals of CdTe produce marked changes in their thermal conductivities. This study shows the influence of some specific parameters of the growth conditions: (i) material purity, and (ii) growth temperature and growth rate on the microprecipitate concentration (S?1014cm−3witha?100 A˚) in CdTe obtained by the ’’traveling heater method’’. An upper limit of the homogeneity region is deduced that takes into account all the defects, including nonelectrically active ones.