Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots
作者:
B. R. A. Neves,
M. S. Andrade,
W. N. Rodrigues,
G. A. M. Sa´far,
M. V. B. Moreira,
A. G. de Oliveira,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 14
页码: 1712-1714
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121160
出版商: AIP
数据来源: AIP
摘要:
In this letter, we present an atomic force microscopy study of a series of Te-mediated InAs/GaAs samples with InAs coverage ranging from 1.5 to 3 monolayers. We were able to directly identify the growth mode transition and the mechanism of relaxed island formation. At the limit of coherent growth mode, strained quantum dots aggregate, forming twin quantum dots (TQDs), which are structures of two, or more, dots virtually bonded together, separated by less than 3 nm. The onset of the incoherent mode is then unambiguously characterized by the coalescence of individual TQDs forming initially small, and then larger, relaxed islands. ©1998 American Institute of Physics.
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