首页   按字顺浏览 期刊浏览 卷期浏览 Cathodoluminescence of AlxGa1−xAs grown by liquid‐phase epitaxy
Cathodoluminescence of AlxGa1−xAs grown by liquid‐phase epitaxy

 

作者: E. R. Levin,   I. Ladany,  

 

期刊: Journal of Applied Physics  (AIP Available online 1978)
卷期: Volume 49, issue 6  

页码: 3025-3030

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.325316

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Small‐area contrast fluctuations observed in cathodoluminescence‐mode SEM images of thin AlxGa1−xAs layers grown by liquid‐phase epitaxy on GaAs : Cr substrates are attributed to local variations in alloy composition. Quantitative estimates of the composition excursions are obtained from the variations in CL intensity by calibration against compositions known from electron‐probe microanalysis. In a typical sample, the CL variations are shown to correspond to peak‐to‐peak fluctuations of about 1 at.&percent; of Al and occur over irregular regions generally in the range 6–20 &mgr;m in diameter.

 

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