Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation ofn-type (4.5×1015and1.3×1017 cm−3) andp-type(2.5×1017 cm−3)InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about104and105,respectively. ©1997 American Institute of Physics.