首页   按字顺浏览 期刊浏览 卷期浏览 Random and channeled ion-damage distributions in Zn+implanted GaAs by electron microsco...
Random and channeled ion-damage distributions in Zn+implanted GaAs by electron microscopy

 

作者: G. Vitali,   G. Consalvi,   M. Rossi,   C. Pizzuto,   G. Zollo,   M. Kalitzova,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1994）
卷期: Volume 132, issue 1  

页码: 19-26

 

ISSN:1042-0150

 

年代: 1994

 

DOI:10.1080/10420159408219252

 

出版商: Taylor & Francis Group

 

关键词: GaAs;ion implantation;damage distribution;electron microscopy.

 

数据来源: Taylor

 

摘要:

Some years ago the Transmission Electron Microscopy of High Resolution Replica (TEMHRR) has been successfully used to show the damage created in Si single crystals by channeled In ions [1]. In the present paper the capacity of the same technique to reproduce the full in-depth damage distribution in 1014Zn+/cm2implanted GaAs is shown.

 

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