Measurement of Silicon Epitaxial Layers Less Than 1‐&mgr; Thick by Infrared Interference
作者:
P. A. Schumann,
C. P. Schneider,
期刊:
Journal of Applied Physics
(AIP Available online 1970)
卷期:
Volume 41,
issue 8
页码: 3532-3535
ISSN:0021-8979
年代: 1970
DOI:10.1063/1.1659454
出版商: AIP
数据来源: AIP
摘要:
An analysis of the infrared‐interference method of measuring epitaxial layer thickness is given which shows that the technique is useful for measurement of layers thinner than one micron. The connection between plasma resonance and infrared interference is established. A new method of interpreting the infrared spectra is given which produces both the layer thickness and substrate impurity concentration.
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