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High‐power microwave bipolar transistor modeling

 

作者: Alberto Asensio,   Félix Pérez,  

 

期刊: Microwave and Optical Technology Letters  （WILEY Available online 1992）
卷期: Volume 5, issue 1  

页码: 10-16

 

ISSN:0895-2477

 

年代: 1992

 

DOI:10.1002/mop.4650050105

 

出版商: Wiley Subscription Services, Inc., A Wiley Company

 

关键词: Modeling;CAD;bipolar transistor

 

数据来源: WILEY

 

摘要:

AbstractThis article introduces a model for high‐power microwave bipolar transistors and its associated parameter‐measuring strategy, whose inclusion of thermal phenomena in the dc characterization allows a good estimate of the device's thermal resistance to be obtained. This type of model provides important capabilities for solid‐state radar transmitter d

 

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