Impurity doping in InP layer grown by metalorganic vapor‐phase epitaxy using tertiarybutylphosphine and organic doping sources is presented. Diethylzinc and diethylselenide were used as thep‐type andn‐type doping sources, respectively. Electrical properties and surface morphology of the impurity‐doped layers together with their growth condition dependence were investigated. Good controllability and reproducibility of the doping level were confirmed. The maximum doping levels of 1.8×1018and 1×1019cm−3were successfully attained forp‐InP andn‐InP, respectively. These results promise further safe metalorganic vapor‐phase epitaxy by using organic compounds for all precursors.