首页   按字顺浏览 期刊浏览 卷期浏览 Investigation of silicon transport in the neutral background of a plasma activated reac...
Investigation of silicon transport in the neutral background of a plasma activated reactive evaporation system

 

作者: Ben Higgins,   Antoine Durandet,   Rod Boswell,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 2  

页码: 192-197

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.587996

 

出版商: American Vacuum Society

 

关键词: PHYSICAL VAPOR DEPOSITION;ELECTRON BEAM EVAPORATION;ATOM TRANSPORT;SILICON;PLASMA SOURCES;ARGON;HYDROGEN;MEDIUM VACUUM;MOMENTUM TRANSFER;ION−ATOM COLLISIONS;CROSS SECTIONS

 

数据来源: AIP

 

摘要:

The transport of silicon vapor from an electron‐beam evaporation source through argon and hydrogen gas in pressures near 1.0 mTorr has been studied. The flux–distance relationships for the effusion/diffusion of the evaporant through the device are found to vary with the type of filling gas. The investigation includes both a simple theoretical model and experiment. The results of each study are in good agreement. Cross sections for the energy‐averaged momentum transfer collisions of silicon with the filling gases (argon, hydrogen) at thermal energies have been determined.

 

点击下载:  PDF (213KB)



返 回