Hall measurements of GaP crystals grown by several different methods and doped with S, Te, Si, and Ge shown‐type behavior with donor concentrations ranging from 1016to 1019cm−3. Binding energies for the donor states at concentrations of 1018cm−3were estimated at 0.089±0.020 eV for S, 0.076±0.020 eV for Te, and 0.078±0.020 eV for Si. The electron mobility was usually between 60 and 100 cm2/V‐sec at room temperature and varied widely with temperature.