We have created YBCO thin film ramp edge Josephson junctions by modification of the edge surface prior to counterelectrode deposition. No deposited interlayer or barrier layer is employed. These devices are uniform and reproducible, and they display resistively shunted junction current-voltage characteristics with excellent magnetic field modulation.IcRnvalues over the range 0.5–3 mV and correspondingRnAvalues of6×10−8–1.2×10−9 &OHgr; cm2at 20 K are easily attained by varying the process. We believe these junctions offer significant promise as the building blocks of a highTcelectronics technology. ©1997 American Institute of Physics.