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Reverse‐bias annealing kinetics of Mg‐H complexes in InP

 

作者: Sathya Balasubramanian,   Vikram Kumar,   N. Balasubramanian,  

 

期刊: Journal of Applied Physics  (AIP Available online 1993)
卷期: Volume 74, issue 7  

页码: 4521-4526

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.354369

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The reactivation kinetics of hydrogen‐passivated Mg acceptors in InP have been studied by annealing experiments carried out with different reverse biases. It is shown using a new analysis that the actual dissociation energy of the Mg‐H complexes can be estimated even without applying a sufficient reverse bias to overcome retrapping of H at the dopant site. The dissociation process follows a first‐order kinetics and the dissociation frequency and activation energy were estimated at various depths ranging from the surface up to 0.5 &mgr;m using an empirical analysis of the experimental data. A bias‐independent dissociation energy of 1.40±0.08 eV was obtained when estimated at the surface. An apparently higher dissociation energy results when calculated in the bulk. This overestimation is pronounced for low‐bias anneals and is explained as a result of retrapping. The concentration profile data is consistent with the positively charged state of the diffusing H inp‐InP.

 

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