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Parameters of radiation defect clusters in silicon irradiated by high-energy γ-rays

 

作者: V.I. Kuznetsov,   P.F. Lugakov,   V.V. Shusha,  

 

期刊: Radiation Effects  （Taylor Available online 1985）
卷期: Volume 87, issue 1  

页码: 15-22

 

ISSN:0033-7579

 

年代: 1985

 

DOI:10.1080/01422448508205229

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

A change in the concentration and charge-carrier lifetime in n-Si when irradiating by high-energy γ-rays was studied and parameters of radiation defect clusters produced by them were determined.

 

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