Electron resonant tunneling in Si/SiGe double barrier diodes
作者:
K. Ismail,
B. S. Meyerson,
P. J. Wang,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 8
页码: 973-975
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106319
出版商: AIP
数据来源: AIP
摘要:
We report upon the fabrication and characterization of the firstn‐type resonant tunneling diodes in the SiGe materials system. The devices fabricated were Si/SiGe/Si/SiGe/Si double‐barrier diodes, employing strain‐relieved SiGe as the barrier layers surrounding pseudomorphic tensile strained Si. These devices were prepared using ultrahigh vacuum chemical vapor deposition. Negative differential conductance is observed at room temperature in these devices with a peak‐to‐valley ratio of 1.2. The corresponding value at 77 K is 1.5.
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