Organometallic chemical vapor deposition of cobalt and formation of cobalt disilicide
作者:
M. E. Gross,
K. Schnoes Kranz,
D. Brasen,
H. Luftman,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 5
页码: 1548-1552
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584212
出版商: American Vacuum Society
关键词: CHEMICAL VAPOR DEPOSITION;VAPOR DEPOSITED COATINGS;VLSI;PLATING;THIN FILMS;COBALT;COBALT SILICIDES;HIGH TEMPERATURE;PYROLYSIS;ORGANOMETALLIC COMPOUNDS;ELECTRIC CONDUCTIVITY;SILICON;SYNTHESIS;FILM GROWTH;SURFACE REACTIONS;Co;CoSi2
数据来源: AIP
摘要:
The deposition of Co thin films by organometallic chemical vapor deposition is reported. Co is of interest in very large scale integration technology as a catalyst for electroless plating of other metals and as a precursor to formation of CoSi2. High purity, conformal films of Co are deposited by pyrolysis of Co2(CO)8at 200 °C in vacuum. These films exhibit electrical resistivities of 5–10 μΩ cm and excellent adhesion to Si and SiO2. CoSi2is formed by heating the samples at 700 °C. The CoSi2films resulting from reaction of the Co films with the Si substrate contain larger grains than the starting film and exhibit electrical resistivities of ∼13–37 μΩ cm. Selective formation of CoSi2on patterned test wafers shows similar attributes.
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