Density sensitive x‐ray line ratios in the Bei, Bi, and Neiisoelectronic sequences
作者:
U. Feldman,
J. F. Seely,
A. K. Bhatia,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 11
页码: 3954-3958
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335569
出版商: AIP
数据来源: AIP
摘要:
The intensities of x‐ray transitions in highly charged ions in the Bei, Bi, and Neiisoelectronic sequences have been calculated as functions of electron density. The intensities of the transitions from the 2sn2pm3pconfiguration, relative to the intensities from the 2sn2pm3sand 2snpm3dconfigurations, are strong functions of electron density in high‐density plasmas. The density sensitivity occurs at electron densities between 1016cm−3(for Si ions) and 1022cm−3(for Kr ions). Opacity is unimportant for plasma dimensions that are characteristic of dense laser‐produced plasmas. These x‐ray line ratios represent a promising new density diagnostic for high‐density plasmas.
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