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Molecular beam epitaxy growth of pseudomorphic II–VI multilayered structures for blue/green laser diodes and light‐emitting diodes

 

作者: J. Han,   L. He,   D. C. Grillo,   S. M. Clark,   R. L. Gunshor,   H. Jeon,   A. Salokatve,   A. V. Nurmikko,   G. C. Hua,   N. Otsuka,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 1254-1257

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587015

 

出版商: American Vacuum Society

 

关键词: LASER DIODES;FABRICATION;VISIBLE RADIATION;MULTILAYERS;QUATERNARY COMPOUNDS;ZINC SULFIDES;MAGNESIUM SELENIDES;MOLECULAR BEAM EPITAXY;NITROGEN ADDITIONS;ZINC CHLORIDES;INTERNAL STRAINS;THRESHOLD VOLTAGE;(Zn,Mg)(S,Ge):N;(Zn,Mg)(S,Se):ZnCe2

 

数据来源: AIP

 

摘要:

This article reports results involving the molecular beam epitaxial growth of the quaternary (Zn,Mg)(S,Se) compound as well as the incorporation of this quaternary into a pseudomorphic separate confinement heterostructure laser diode configuration. It was found that the quaternary (Zn,Mg)(S,Se) can accommodate much more strain as compared to binary ZnSe; the films remained essentially pseudomorphic, with low defect densities, for strains in the studied range from −0.225% (tension) to 0.137% (compression) at room temperature. The relationship between the surface morphology and the strain is also described in this paper. Lasing was routinely obtained at room temperature under pulsed injection. A threshold lasing voltage of as low as 7 V was observed in index‐guided diode lasers.

 

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