首页   按字顺浏览 期刊浏览 卷期浏览 Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP
Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP

 

作者: Oleg V. Sulima,   Andreas W. Bett,   Michael G. Mauk,   Boris Ya. Ber,   Partha S. Dutta,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1903）
卷期: Volume 653, issue 1  

页码: 402-413

 

ISSN:0094-243X

 

年代: 1903

 

DOI:10.1063/1.1539395

 

出版商: AIP

 

数据来源: AIP

 

摘要:

This paper reviews recent results of the study of Zn diffusion from the vapor phase in important thermophotovoltaic (TPV) materials such as GaSb‐, InGaAsSb‐, InGaSb‐ and InAsSbP. Peculiarities of Zn diffusion in each of these materials and different ways of tailoring the Zn diffusion profile for fabrication of optimized emitters in TPV cells are discussed. © 2003 American Institute of Physics

 

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