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Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

 

作者: J. Ahopelto,   M. Sopanen,   H. Lipsanen,   S. Lourdudoss,   E. Rodriguez Messmer,   E. Ho¨fling,   J. P. Reithmaier,   A. Forchel,   A. Petersson,   L. Samuelson,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 21  

页码: 2828-2830

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119015

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires. ©1997 American Institute of Physics.

 

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