Oxidation of Sintered Aluminum Nitride at Near‐Ambient Temperatures
作者:
I. Dutta,
S. Mitra,
L. Rabenberg,
期刊:
Journal of the American Ceramic Society
(WILEY Available online 1992)
卷期:
Volume 75,
issue 11
页码: 3149-3153
ISSN:0002-7820
年代: 1992
DOI:10.1111/j.1151-2916.1992.tb04403.x
出版商: Blackwell Publishing Ltd
数据来源: WILEY
摘要:
Oxidation of sintered aluminum nitride at low temperatures (20°–200°C) was studied using transmission electron microscopy (TEM). Particles of α‐Al2O3, about 20–30 Å in size, were found to form within minutes on freshly cleaned surfaces of AlN at room temperature. The oxide was found to grow nearly epitaxially on AlN when the {0001}AlNplanes were exposed to the surface. Limited nonepitaxial oxidation was also observed when the basal planes were inclined to the TEM foil surface. After 10 h in air at 75°C, the particles coarsened to about 50 Å, while after 150 h at 200°C, an oxide film, about 500 Å thick, was observed o
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