Dielectric Properties of Ta2O5Thin Films
作者:
D. L. Pulfrey,
P. S. Wilcox,
L. Young,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 10
页码: 3891-3898
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657112
出版商: AIP
数据来源: AIP
摘要:
Alternating current bridge, step response, and dc conduction measurements are reported on anodic oxide films on tantalum with counterelectrodes of gold and indium. The step response currents followed at−nlaw, wherenwas from 0.9 to 1.0 depending on conditions. For a linear dielectric response, this corresponds to &egr;″ (&ohgr;) varying as &ohgr;n−1, i.e., as either &ohgr;−0.1or independent of frequency, respectively. For low values of applied step voltages with specimens made in certain ways, the magnitude of the step response agreed with extrapolated bridge measurements. Deviations are discussed in terms of electronic space‐charge effects. Below room temperature, &egr;″/Twas constant as expected for a superposition of Debye losses with relaxation times determined by a thermal activation process with a flat distribution of activation energies. The slope of logJvsF1/2plots for electronic conduction corresponded to the Schottky or Poole‐Frenkel values depending on whether the Ta electrode was negative or positive.
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