Atomic‐resolution studies of surface dynamics by electron microscopy
作者:
David J. Smith,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1985)
卷期:
Volume 3,
issue 5
页码: 1563-1567
ISSN:0734-211X
年代: 1985
DOI:10.1116/1.582985
出版商: American Vacuum Society
关键词: SURFACE ANALYSIS;ELECTRON MICROSCOPY;SURFACES;SURFACE STRUCTURE;REVIEWS;DYNAMICS;HIGH−RESOLUTION METHODS;METALS;SEMICONDUCTOR MATERIALS;OXIDES;IMAGES;ELECTRON MICROSCOPES;CdTe;Au;ZnCrFeO4
数据来源: AIP
摘要:
High resolution electron microscopy (HREM) has been applied to the characterization of surfaces and surface rearrangements using the profile imaging method. This review paper outlines the basic principles of the technique and then surveys the recent atomic‐level observations of metal, semiconductor, and oxide particle surfaces. Advantages and possible drawbacks of the technique are briefly discussed.
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