Determination of excess carrier lifetime ofp-i-ndiodes from the r.f. resistance at microwave frequencies
作者:
K.N.Bhat,
J.M.Borrego,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1977)
卷期:
Volume 1,
issue 3
页码: 69-72
年代: 1977
DOI:10.1049/ij-ssed.1977.0007
出版商: IEE
数据来源: IET
摘要:
A steady-state method for determining the excess carrier lifetime usingp-i-ndiodes is presented. The carrier lifetime is obtained from the r.f. resistance of a forward-biasedp-i-ndiode measured at microwave frequencies. The carrier lifetime obtained with this method in diffused siliconp-i-ndoides is compared with the carrier lifetime obtained from other usual methods of measurement.
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