This paper deals with the formation, growth kinetics, and some electrical properties of palladium silicide formed by using the direct implantation of palladium ions into (100) and (111) Si using a focused ion beam machine. The activation energy for growth of the silicide formed has been determined by two different techniques and has been found to be significantly lower than normally reported values for thermal formation by thin‐film annealing of the same silicide. Results from an extensive microstructural study have been presented for a variety of implantation and follow‐up anneal conditions. Finally, some data for Schottky diodes made using this novel technique have been presented.