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EXAFS studies of the bonding geometry of oxygen on Si(111) using electron yield detection

 

作者: J. Stöhr,   L. I. Johansson,   I. Lindau,   P. Pianetta,  

 

期刊: Journal of Vacuum Science and Technology  （AIP Available online 1979）
卷期: Volume 16, issue 5  

页码: 1221-1224

 

ISSN:0022-5355

 

年代: 1979

 

DOI:10.1116/1.570195

 

出版商: American Vacuum Society

 

关键词: SILICON;SURFACES;OXYGEN;CHEMISORPTION;ABSORPTION SPECTRA;FINE STRUCTURE;X RADIATION;BOND LENGTHS;CHEMICAL SHIFT;STORAGE RINGS;ULTRAHIGH VACUUM;SILICON OXIDES;ARGON IONS;COLLISIONS

 

数据来源: AIP

 

摘要:

Surface extended x‐ray absorption fine structure (EXAFS) measurements are reported above the OKabsorption edge (∠535 eV) for oxygen chemisorbed on Si(111). For the investigated initial oxidation stage—characterized by a Si 2pchemical shift of 2.5 eV—we find theO–Si bond length to be closely the same (within 0.05 Å) as in bulk SiO2. Comparative analysis of the relative EXAFS amplitude with that for SiO2provides information on the oxygen bonding geometry on the Si(111) surface.

 

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