InGaAs/InAlAs superlattice avalanche photodiode with a separated photoabsorption layer
作者:
Toshiaki Kagawa,
Yuichi Kawamura,
Hiromitsu Asai,
Mitsuru Naganuma,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 18
页码: 1895-1897
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104004
出版商: AIP
数据来源: AIP
摘要:
A novel structure superlattice avalanche photodiode is proposed. Ap‐InGaAs photoabsorption layer is separated from a nondoped InGaAs/InAlAs superlattice avalanche multiplication region. The electric field strength at the photoabsorption layer is controlled by a thin, highly dopedp‐InGaAs layer, which is sandwiched between the multiplication and photoabsorption layers. Devices with this structure were fabricated by molecular beam epitaxy. The external quantum efficiency is 73% at the multiplication factor of unity. The multiplication noise is quite small corresponding to an effective ionization rate ratio of 0.1. The maximum 3 dB bandwidth is 9.3 GHz.
点击下载:
PDF
(297KB)
返 回