首页   按字顺浏览 期刊浏览 卷期浏览 Energy dependence of silicon amorphization during ion implantation-part I
Energy dependence of silicon amorphization during ion implantation-part I

 

作者: U. Yarkulov,  

 

期刊: Radiation Effects  （Taylor Available online 1986）
卷期: Volume 100, issue 1-2  

页码: 11-17

 

ISSN:0033-7579

 

年代: 1986

 

DOI:10.1080/00337578608208731

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

A new mechanism is proposed for interpreting silicon amorphization during ion implantation. According to the proposed mechanism an amorphous state is formed in a disordered region only under the following conditions:

 

点击下载:  PDF (372KB)



返 回