Nitrogen ions were implanted intoZnSxSe1−xepilayers grown onp-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a postannealing process in aN2ambient. Schottky structures employing the implantedp-typeZnSxSe1−xwere fabricated and device efficacy was examined by photoluminescence (PL) spectroscopy, current–voltage(I–V),current–voltage temperature(I–V–T),and high frequency capacitance–voltage(C–V)measurements. PL spectra showed a clear donor–acceptor pair (DAP) recombination at an energy of 2.735 and 2.72 eV, in both MBE and MOCVD ZnSSe epilayers, respectively, regardless of the postannealing temperatures. The diode conduction in forward bias proceeds by the combination of thermionic and tunneling emission.C–Vmeasurement proved the maximum doping concentration to be around1017 cm−3after ion implantation. ©1997 American Institute of Physics.